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Computer Science / Telecom - 20.02.2019
CEA-Leti and Stanford Target Edge-Ai Apps with Breakthrough NVM Memory Cell
Paper at ISSCC 2019 Presents Proof-of-Concept Multi-Bit Chip that Overcomes NVM's Read/Write, Latency and Integration Challenges SAN FRANCISCO - Feb. 20, 2019 - Researchers at CEA-Leti and Stanford University have developed the world's first circuit integrating multiple-bit non-volatile memory (NVM) technology called Resistive RAM (RRAM) with silicon computing units, as well as new memory resiliency features that provide 2.3-times the capacity of existing RRAM.

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