In one of nine presentations at IEDM 2023 , the institute said that current GaN high-electron-mobility-transistor (HEMT) technologies used in telecom or radar applications come on small GaN/SiC substrates and require processing in dedicated cleanrooms. -
The high-performance SiC substrates used to grow GaN layers are very expensive and available only in relatively small size. This R&D project developed GaN/silicon technology (GaN/Si) on 200mm and later for 300mm wafer diameters in CMOS-compatible cleanrooms to reduce substrate cost and benefit from existing high-performance cleanroom facilities.--
As a result, CEA-Leti’s GaN/Si technology performance at 28 GHz is gaining ground on GaN/SiC technology in terms of power density.-
-Our goal was to reach existing state-of-the-art GaN HEMT performance at ~30 GHz with a 200mm CMOS- compatible GaN/Si technology and to compete with GaN/SiC technology,- said Erwan Morvan, CEA-Leti scientist and lead author of the paper, "6.6W/mm 200mm CMOS Compatible AlN/GaN/Si MIS-HEMT with In-Situ SiN Gate Dielectric and Low Temperature Ohmic Contacts-.
-This work demonstrates that CMOS-compatible 200mm SiN/AlN/GaN HEMT on silicon technology is a promising candidate for applications like 5G/6G infrastructure, satcom, radar for UAV detection or earth observation. It should enable less expensive devices while keeping high power density, high efficiency, light weight and compactness," he said.